• DocumentCode
    163757
  • Title

    Optimization of bridged-grain polysilicon thin-film transistor (BG-TFT)

  • Author

    Tassis, D.

  • Author_Institution
    Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
  • fYear
    2014
  • fDate
    12-14 May 2014
  • Firstpage
    231
  • Lastpage
    234
  • Abstract
    Polycrystalline silicon thin-film transistors (p-TFTs) can significantly be improved in terms of their performance with the bridged grain structure (BG TFTs) by forming lines with higher doping concentration (5×1015-1016 cm-3) across the active channel, equally spaced at a distance close to the average grain size.
  • Keywords
    crystal microstructure; doping profiles; elemental semiconductors; optimisation; silicon; thin film transistors; Si; bridged grain polysilicon thin film transistor; bridged grain structure; doping concentration; Doping; Grain boundaries; Logic gates; Organic light emitting diodes; Periodic structures; Silicon; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    978-1-4799-5295-3
  • Type

    conf

  • DOI
    10.1109/MIEL.2014.6842129
  • Filename
    6842129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=163757