DocumentCode :
163757
Title :
Optimization of bridged-grain polysilicon thin-film transistor (BG-TFT)
Author :
Tassis, D.
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
fYear :
2014
fDate :
12-14 May 2014
Firstpage :
231
Lastpage :
234
Abstract :
Polycrystalline silicon thin-film transistors (p-TFTs) can significantly be improved in terms of their performance with the bridged grain structure (BG TFTs) by forming lines with higher doping concentration (5×1015-1016 cm-3) across the active channel, equally spaced at a distance close to the average grain size.
Keywords :
crystal microstructure; doping profiles; elemental semiconductors; optimisation; silicon; thin film transistors; Si; bridged grain polysilicon thin film transistor; bridged grain structure; doping concentration; Doping; Grain boundaries; Logic gates; Organic light emitting diodes; Periodic structures; Silicon; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
Type :
conf
DOI :
10.1109/MIEL.2014.6842129
Filename :
6842129
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=163757
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