Title :
Processing material evaluation and ultra-wideband modeling of through-strata-via (TSV) in 3D integrated circuits and systems
Author :
Xu, Zheng ; Beece, Adam ; Zhang, Dingyou ; Chen, Qianwen ; Rose, Kenneth ; Lu, James Jian-Qiang
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Since the conventional planar ICs encountered many physical, technological and economic bottlenecks, 3D integration by stacking and connecting function blocks in a vertical fashion is regarded as a viable approach to alleviate such bottlenecks. Through-strata-via (TSV) is one of the most attractive 3D integration solutions, which offers a massive number of short interconnects, high bandwidth, reduced delay and power consumption, heterogeneous integration, small footprint, improved yield, and reduced volume production cost. This paper reports on electrical characterizations and wideband modeling of typical TSV structures up to 100 GHz. The analysis is conducted in both the time domain and frequency domain, unveiling the impacts of processing materials on TSV electrical performance. The accurate broadband modeling approaches and results facilitate and benefit the infant 3D CAD development.
Keywords :
CAD; SPICE; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; power consumption; 3D CAD development; 3D integrated circuits; 3D integration solutions; TSV electrical performance; broadband modeling approach; heterogeneous integration; material evaluation; power consumption; through-strata-via; ultrawideband modeling; Conductivity; Silicon; Solid modeling; Substrates; Three dimensional displays; Through-silicon vias; 3D integration; Processing Material; TSV; Through-Strata-Via; Wideband Modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667669