Title :
An 18ns1mh Cmos Sram
Author :
Shimada, H. ; Tange, Y. ; Tanimoto, K. ; Shiraishi, M. ; Suzuki, N. ; Nomura, T.
Author_Institution :
Fujitsu MOS Memory Design Division, Kawasaki, Japan
Keywords :
Aluminum; Capacitance; Circuit noise; Error analysis; Fluctuations; Frequency; Power dissipation; Random access memory; Read-write memory; Ring oscillators;
Conference_Titel :
Solid-State Circuits Conference, 1988. Digest of Technical Papers. ISSCC. 1988 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1988.663686
