Title :
Thomas-Fermi method for computing the electron spectrum of highly doped quantum wires in n-Si
Author :
Grimalsky, Vladimir ; Oubram, Outmane ; Koshevaya, S. ; Castrejon-M, C.
Author_Institution :
CIICAp, Autonomous Univ. of State Morelos (UAEM), Cuernavaca, Mexico
Abstract :
The application of TF method to calculate the electron spectrum in highly doped n-Si quantum wires is presented under finite temperatures, where the many-body effects, like exchange, are taken into account. The electron potential energy is calculated from a simple separate equation. Then the energy sub-levels and wave functions are simulated from the Schrödinger equation. Peculiarities of solving the Schrödinger equation in the case of the anisotropic effective mass are pointed out.
Keywords :
Schrodinger equation; Thomas-Fermi model; electron spectra; elemental semiconductors; semiconductor quantum wires; silicon; wave functions; Schrödinger equation; Si; TF method; Thomas-Fermi method; anisotropic effective mass; electron potential energy; electron spectrum; energy sub-levels; finite temperatures; highly doped quantum wires; many-body effects; wave functions; Equations; Mathematical model; Potential energy; Quantum computing; Quantum mechanics; Silicon; Wires;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842132
