Title :
Analysis of heavily doped semiconductors
Author :
Sokolic, S. ; Amon, S. ; Slivnik, T.
Author_Institution :
Fac. of Electr. & Comput. Eng., Ljubljana Univ., Yugoslavia
Abstract :
An accurate determination of an integral appearing in Kane´s expression for the density of states is presented. Expressions of this approach are compared with other existing approximations. Mock´s model for total density of states is applied to illustrate possibilities of proposed derivations. An efficient algorithm for analysis of highly doped semiconductor material properties with Kane-related models is introduced. Calculated dependence of the pn product and screening length vs. doping is given
Keywords :
band structure of crystalline semiconductors and insulators; electronic density of states; heavily doped semiconductors; impurity electron states; minority carriers; Kane expression; Mock model; Si:B,P; algorithm; band structure; band tail effect; density of states; heavily doped semiconductors; integral; minority carrier concentration; pn product; screening length; Couplings; Doping; Erbium; Impurities; Iterative algorithms; Nonlinear equations; Space charge; Tail;
Conference_Titel :
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location :
LJubljana
Print_ISBN :
0-87942-655-1
DOI :
10.1109/MELCON.1991.161787
