Determining specific contact resistivity of contacts to bulk semiconductor using a two-contact circular test structure

Author

Pan, Yongping ; Collins, Aaron M. ; Holland, Anthony S.

Author_Institution

Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia

fYear

2014

fDate

12-14 May 2014

Firstpage

257

Lastpage

260

Abstract

We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3-D) contact structures using a two-electrode test structure. This method was developed using Finite Element Modeling (FEM). Experimental measurements were performed for contacts of 200 nm nickel (Ni) to p⁺-type germanium (Ge) substrates. The SCR obtained was (2.3-27) ×10^-6 Ω·cm².

Keywords

contact resistance; elemental semiconductors; finite element analysis; germanium; nickel; ohmic contacts; semiconductor-metal boundaries; substrates; 3D contact structures; FEM; Ge; Ni; SCR; bulk semiconductor contacts; finite element modeling; nickel; p+-type germanium substrates; size 200 nm; specific contact resistivity; three-dimensional contact structures; two-contact circular test structure; two-electrode test structure; Conductivity; Finite element analysis; Geometry; Nickel; Semiconductor device measurement; Semiconductor device modeling; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on

Conference_Location

Belgrade

Print_ISBN

978-1-4799-5295-3

Type

conf

DOI

10.1109/MIEL.2014.6842136

Filename

6842136