• DocumentCode
    163787
  • Title

    Resistive switching effects in Pt/HfO2/TiN MIM structures and their dependence on bottom electrode interface engineering

  • Author

    Paskaleva, A. ; Hudec, B. ; Jancovic, P. ; Frohlich, K.

  • Author_Institution
    Inst. of Solid State Phys., Sofia, Bulgaria
  • fYear
    2014
  • fDate
    12-14 May 2014
  • Firstpage
    285
  • Lastpage
    288
  • Abstract
    Resistive switching (RS) effects in Pt/HfO2/TiN MIM capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.
  • Keywords
    MIM structures; electrodeposition; hafnium compounds; platinum; titanium compounds; MIM capacitors; MIM structures; Pt-HfO2-TiN; bottom electrode interface engineering; deposition process; dielectric thickness; electrode treatment; resistive switching effects; Dielectrics; Electrodes; Hafnium compounds; Ions; Switches; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    978-1-4799-5295-3
  • Type

    conf

  • DOI
    10.1109/MIEL.2014.6842144
  • Filename
    6842144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=163787