Title :
The electronic structure of graphene nanomesh
Author :
Guo, Qihang ; Zhang, Jinyu ; He, Yu ; Kang, Jiahao ; Qian, He ; Wang, Yan ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The band structure of GNM is studied using TB method. It is found that some surface states appear in the vicinity of the Fermi levels. The electron might be trapped on these surface states due to very large effective mass. The increase of the effective bandgap of GNM as the increase of the radius of the nanohole, may be responsible for the increase of current on/off ratio for GNM devices observed in the experiment. Process variations are found to be suppressed effectively in GNM.
Keywords :
Fermi level; electron traps; energy gap; graphene; nanostructured materials; surface states; tight-binding calculations; Fermi levels; GNM devices; TB method; band structure; bandgap; electron traps; electronic structure; graphene nanomesh; surface states; Electron traps; Nanoscale devices; Nanostructures; Neck; Photonic band gap; Scattering; Surface treatment;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667678
