Title :
A new method for series resistance extraction in poly-Si thin-film transistors
Author :
Zhou, Yan ; Wang, Mingxiang ; Wong, Man
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
Abstract :
A new method for extraction of series resistance is proposed for poly-Si thin-film transistors. In this method, the extraction procedure is insensitive to the variation in effective channel length and device mobility, since both quantities are included in a single extracted parameter. The method has been successfully applied to a group of poly-Si TFTs with mask channel length from 2 to 30μm. Compared with the estimated series resistance, the extracted result is reasonable.
Keywords :
elemental semiconductors; silicon; thin film transistors; Si; device mobility; effective channel length; poly-Si thin-film transistor; series resistance extraction; size 2 mum to 30 mum; Electrical resistance measurement; Length measurement; Linearity; Logic gates; MOSFETs; Resistance; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667681
