Title :
UHF-1: a high speed complementary bipolar analog process on SOI
Author :
Davis, Chris ; Bajor, G. ; Butler, J. ; Crandell, T. ; Delgado, Joaquim ; Jung, TaeYong ; Khajeh-Noori, Y. ; Lomenick, B. ; Milam, V. ; Nicolay, H. ; Richmond, S. ; Rivoli, T.
Author_Institution :
Harris Semicond., Melbourne, FL, USA
Abstract :
A complementary silicon bipolar process has been developed for high-performance analog applications. The process features high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz, respectively. The transistors have a double polysilicon, self-aligned structure which is isolated by using bonded wafer silicon-on-insulator (SOI) technology and vertical trenches. The circuit components are interconnected with two levels of metallization. The UHF-1 process has been used to create several advanced analog high-frequency integrated circuits in a monolithic form
Keywords :
bipolar integrated circuits; integrated circuit technology; linear integrated circuits; semiconductor-insulator boundaries; 5 GHz; 9 GHz; HF transistors; SOI; Si; UHF-1; bonded wafer technology; complementary bipolar analog process; double polysilicon; high speed; high-frequency integrated circuits; metallization; monolithic form; self-aligned structure; two-level metal; vertical trenches; Analog integrated circuits; Frequency; Integrated circuit interconnections; Integrated circuit technology; Isolation technology; Metallization; Monolithic integrated circuits; Silicon on insulator technology; Transistors; Wafer bonding;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274037
