Lifetime profile reconstruction in helium implanted silicon for planar IGBTs

Electronic switching devices often requires some form of post processing to adjust, with high spatial resolution, the value of the recombination lifetime. The most selective killing technique used so far exploits high energy helium implantation. The main obstacle to the proper modeling of implantation effects comes from the unavailability of reliable measurement techniques able to “look” into the device to measure the local value of the lifetime. In this paper the differential technique for lifetime profile measurements is applied to materials suitable for the fabrication of planar IGBTs.