Title :
Impact of the two traps related leakage mechanism on the tail distribution of DRAM retention characteristics
Author :
Ueno, S. ; Inoue, Y. ; Inuishi, M.
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Two traps related leakage mechanism is proposed to explain the tail distribution of the DRAM retention characteristics. The main mode is explained by the trap assisted tunneling with one trap. We propose that the tail mode is created when the two traps are close enough to cooperate for increasing the leakage current. We calculate both the main and the tail distributions with the Monte Carlo method by using one basic equation deduced from our model for the first time.
Keywords :
DRAM chips; Monte Carlo methods; electron traps; leakage currents; tunnelling; DRAM; Monte Carlo model; leakage current; retention characteristics; tail distribution; trap assisted tunneling; Area measurement; Current measurement; Equations; Leakage current; Probability distribution; Random access memory; System testing; Tail; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823841
