Title :
A new SOI MOSFET structure with junction type body contact
Author :
In-Young Chung ; Dong Soo Woo ; Young June Park ; Hong Shick Min
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A new SOI MOSFET structure with a junction type body contact (BJG) is proposed, which can be realized with compact design and simple processes. It is shown from the experimental study that the structure provides nearly perfect immunity against the circuit failure caused by the parasitic bipolar effect and an excellent speed performance, so that it can be a promising candidate for the SOI circuits.
Keywords :
CMOS integrated circuits; MOSFET; leakage currents; semiconductor device reliability; silicon-on-insulator; transient analysis; 1 to 2 V; SOI MOSFET structure; body-junctioned-to-gate structure; circuit failure; compact design; junction type body contact; operating voltage; parasitic bipolar effect; speed performance; transient behavior; Circuit testing; Diodes; Frequency; Immune system; Logic circuits; Logic devices; MOSFET circuits; Output feedback; Pulse measurements; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823846
