Title :
Characterization of low VAR bipolar transistors using a revised SPICE simulator
Author :
Neaves, G. ; White, J. ; Burnham, M. ; Zlotnicka, A. ; Pryor, R.
Author_Institution :
Motorola Inc., Mesa, AZ, USA
Abstract :
The approximation of the Gummel-Poon base width modulation term, q1, that is implemented in conventional versions of SPICE, is discussed. The impact of the approximation of the characterization of low VAR bipolar transistors is described. Comparisons of simulated to measured curves demonstrate the improved accuracy which results from using the unapproximated q1 term. Use of the unapproximated q1 term produces physically meaningful Early voltage parameters and improved simulation accuracy
Keywords :
SPICE; bipolar transistors; digital simulation; semiconductor device models; Early voltage parameters; Gummel-Poon base width modulation term; SPICE simulator; approximation; low VAR bipolar transistors; simulation accuracy; Bipolar transistors; Capacitance; Circuit simulation; Degradation; Equations; Feedback; Parameter extraction; Reactive power; SPICE; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274044
