Title :
Simulation of bipolar VLSI circuits using overlapped relaxation technique
Author :
Mokari, M.E. ; Fang, Wen
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio Univ., Athens, OH, USA
Abstract :
A fast and robust overlapped waveform relaxation (OWR) algorithm is presented for transient simulation of bipolar VLSI circuits. From the simulation results, it can be concluded that by using the OWR algorithm, the speedup can be two orders of magnitude compared to direct SPICE-like methods for very large circuits. Four representative examples, including combinational and sequential digital circuits as well as an analog bipolar circuit, are included. It is shown that the OWR algorithm is twice as fast as the waveform relaxation algorithm
Keywords :
VLSI; bipolar integrated circuits; circuit analysis computing; digital integrated circuits; linear integrated circuits; relaxation theory; semiconductor device models; transient response; OWR algorithm; analog bipolar circuit; bipolar VLSI circuits; combinational digital circuits; overlapped relaxation technique; sequential digital circuits; transient simulation; very large circuits; waveform relaxation; Circuit simulation; Computational modeling; Computer simulation; Convergence; Coupling circuits; Equations; Partitioning algorithms; Robustness; Very large scale integration; Virtual manufacturing;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274045
