Title :
An analytical model for collector currents in gated lateral bipolar transistors
Author_Institution :
Motorola Inc., Mesa, AZ, USA
Abstract :
A physically based, analytical model for collector currents in lateral bipolar junction transistors is presented and used to describe the hybrid mode operation of these devices in the presence of a gate electrode over the base region. Results obtained from the analytical model are compared with those of computer simulations. Good agreement has been demonstrated with both numerical simulations and experimental data
Keywords :
bipolar transistors; semiconductor device models; analytical model; base region; collector currents; gate electrode; gated lateral bipolar transistors; hybrid mode operation; Analytical models; BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Computer simulation; Electrodes; MOSFET circuits; Numerical models; Virtual colonoscopy; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274046
