Title :
The effects of vacuum spacer transistors between high performance and low stand-by power devices beyond 16nm
Author :
Park, Jemin ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
The vacuum spacer transistors are compared with the conventional oxide spacer transistors in both high performance device and low standby power device. In high performance device case, with 14nm vacuum spacers, the CMOS inverter delay, switching charge, and switching energy are reduced by 6.6%, 15.6%, and 19.1%, respectively, compared to oxide spacer. In low standby power device case, with 18nm vacuum spacers, the inverter delay is increased by 10% compared to oxide spacer due to the degradation of on-current.
Keywords :
CMOS integrated circuits; invertors; power transistors; CMOS inverter delay; oxide spacer transistors; stand-by power devices; switching charge; switching energy; vacuum spacer transistors; Elementary particle vacuum; Inverters; Logic gates; MOSFETs; Performance evaluation; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667690
