High-isolation MEMS capacitive shunt switch

Author

Zhang, Yi ; Onodera, Kazumasa ; Maeda, Ryutaro

Author_Institution

Adv. Manuf. Res. Inst., Nat. Inst. of Adv. Sci. & Technol., Ibaraki

Volume

1

fYear

2005

Firstpage

228

Abstract

Many efforts have been made to find materials with high dielectric constant for the application of RF capacitive shunt switch in order to obtain large down-state capacitance and therefore high isolation. In this work, HfO₂ dielectric was suggested for the application of RF shunt switch. The HfO₂ dielectric prepared in this work had the breakdown field higher than 20 MV/cm. The RF switch using 45-nm-thick HfO2 dielectric showed excellent performance. Its insertion loss is lower than 0.8 dB until 50 GHz at the up-state position. Its isolation is higher than 30 dB until 50 GHz at the down-state, particularly, higher than 50 dB in the range of 10 - 15 GHz

Keywords

dielectric devices; dielectric materials; electric breakdown; microswitches; microwave switches; permittivity; 10 to 15 GHz; 45 nm; HfO₂; MEMS capacitive shunt switch; RF capacitive shunt switch; breakdown field; high dielectric constant; insertion loss is; Capacitance; Dielectric breakdown; Dielectric materials; Hafnium oxide; High-K gate dielectrics; Micromechanical devices; Radio frequency; Sputtering; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on

Conference_Location

Beijing

Print_ISBN

0-7803-9128-4

Type

conf

DOI

10.1109/MAPE.2005.1617889

Filename

1617889