مرکز منطقه ای اطلاع رساني علوم و فناوري - A 60ns Hot Electron Resistant 4m dram with Trench Cell

DocumentCode :

1638256

Title :

A 60ns Hot Electron Resistant 4m dram with Trench Cell

Author :

Harter, J. ; Pribyl, W. ; Bahring, M. ; Lill, A. ; Mattes, H. ; Muller, W. ; Risch, L. ; Sommer, D. ; Strunz, R. ; Weber, W. ; Hoffmann, K.

Author_Institution :

Siemens AG, Munich, Germany

fYear :

1988

Firstpage :

244

Keywords :

Circuits; Content addressable storage; Electrons; Fuses; Inverters; MOSFETs; Random access memory; Stress; Variable structure systems; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Circuits Conference, 1988. Digest of Technical Papers. ISSCC. 1988 IEEE International

Conference_Location :

San Francisco, CA, USA

Type :

conf

DOI :

10.1109/ISSCC.1988.663711

Filename :

663711

Link To Document :