Title :
Device reliability in analog CMOS applications
Author :
Thewes, R. ; Brederlow, R. ; Schlunder, C. ; Wieczorek, P. ; Hesener, A. ; Ankele, B. ; Klein, P. ; Kessel, S. ; Weber, W.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A comprehensive discussion is performed of MOSFET reliability under analog operation taking into account channel hot-carrier (CHC) stress, bias temperature (BT) instabilities, hard and soft breakdown and SILC. The conditions for the occurrence of these mechanisms and criteria for stress induced malfunction of analog circuits are discussed including the physics behind the behavior of typical analog device parameters after CHC and BT stress.
Keywords :
CMOS analogue integrated circuits; MOSFET; circuit stability; hot carriers; leakage currents; operational amplifiers; semiconductor device breakdown; semiconductor device reliability; MOSFET reliability; SILC; analog CMOS applications; bias temperature instabilities; channel hot-carrier stress; degradation mechanisms; hard breakdown; soft breakdown; stress induced malfunction; two-stage operational amplifier; CMOS technology; Degradation; Digital circuits; Electric breakdown; Hot carriers; MOSFET circuits; Stress; Switching circuits; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823851
