Title :
Mechanism for hot-carrier-induced interface trap generation in MOS transistors
Author :
Zhi Chen ; Hess, K. ; Jinju Lee ; Lyding, J.W. ; Rosenbaum, E. ; Kizilyalli, I. ; Chetlur, S.
Author_Institution :
Dept. of Electr. Eng., Kentucky Univ., Lexington, KY, USA
Abstract :
New experiments for the deuterium isotope effect for hot hole and electron injection have been performed to probe the mechanism for the interface trap generation in n-MOS transistors. The results from these new experiments suggest that electrons in the channel, but not those electrons or holes injected into the oxide, are primarily responsible for the interface trap generation. The bond breaking at the SiO/sub 2/-Si interface is primarily due to the multiple vibrational excitation, which involves in a strong isotope effect.
Keywords :
MOSFET; charge injection; hot carriers; interface states; isotope effects; semiconductor device reliability; MOS transistors; NMOS transistors; SiO/sub 2/-Si; SiO/sub 2/-Si interface; bond breaking; deuterium isotope effect; hot electron injection; hot hole injection; hot-carrier-induced interface trap generation; multiple vibrational excitation; strong isotope effect; Annealing; Charge carrier processes; Current measurement; Degradation; Deuterium; Electron traps; Hot carriers; Hydrogen; Isotopes; MOSFETs;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823852
