Title :
Plasma process-induced damage in SOI devices
Author :
Poiroux, T. ; Pelloie, J.L. ; Turban, G. ; Reimbold, Gilles
Author_Institution :
CEA, Centre d´Etudes Nucleaires de Grenoble, France
Abstract :
In this work, we show that no plasma damage is induced in Silicon-On-Insulator (SOI) devices with classical antenna test structures. We then study new antenna configurations, and we find out some cases in which low damage does occur in SOI transistors. We explain the results by considering the possible current paths and carrier concentrations in devices, and by using a simple analytical model for electron shading.
Keywords :
MOSFET; carrier density; plasma materials processing; semiconductor device models; semiconductor device testing; semiconductor process modelling; silicon-on-insulator; sputter etching; 3.5 to 9 nm; NMOS transistors; SOI devices; analytical model; antenna configurations; carrier concentrations; classical antenna test structures; current paths; electron shading; gate oxide thickness; plasma process-induced damage; Analytical models; Antenna measurements; Diodes; Electron traps; Lead compounds; Plasma applications; Plasma devices; Protection; Silicon on insulator technology; Testing;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823855
