Title :
A compact model of resistive switching devices
Author :
Chen, B. ; Jun, Q.Y. ; Gao, B. ; Zhang, F.F. ; Wei, K.L. ; Chen, Y.S. ; Liu, L.F. ; Liu, X.Y. ; Kang, J.F. ; Han, R.Q.
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
In this paper a compact model both for bipolar and unipolar resistive switching device is proposed. Basic I-V characteristics of RRAM are easily and correctly represented by this model. The model is verified by the bipolar RRAM experiment results. The model can be used as simple and fast tool to design and optimize RRAM.
Keywords :
integrated circuit modelling; random-access storage; I-V characteristics; RRAM; bipolar resistive switching device; compact model; resistive switching devices; unipolar resistive switching device; Circuit simulation; Fluctuations; Integrated circuit modeling; Process control; Resistance; Switches; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667696
