Compact UWB resistive feedback low noise amplifier utilizing current bleeding technique

In this paper, a low-noise amplifier (LNA) designed for the lower band of the ultra-wideband (UWB) spectrum and implemented in 0.18 μm CMOS process is presented. Post-layout simulations show a power gain (S₂₁) of 11.18 dB with 0.8 dB value variations from 259 MHz to 5 GHz. The input and output return losses, S₁₁ and S₂₂, are below -10 dB from 466.4 MHz to 5.63 GHz, while reverse isolation (S₁₂) is better than -24.44 dB across the whole simulated range, from 100 MHz to 7 GHz. The average value of noise figure (NF) is 4.48 dB, with minimum value of 4.24 dB at 1.37 GHz. The input-referred third-order intercept point (IIP₃) and the input-referred 1-dB compression point (P_1dB) are -12.72 dBm and -20.9 dBm, respectively. The LNA core area occupies 0.353 mm² and consumes 11.16 mW from a 1.8 V supply.