Title :
A complete and consistent electrical/thermal HBT model
Author :
McAndrew, Colin C.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
GaAs heterojunction bipolar transistor (HBT) circuits with significant self-heating must be analyzed using coupled electrical and thermal simulation. The author presents a complete, consistent, coupled electrical/thermal model for such devices. The model is applicable to DC, AC, transient large-signal steady-state, noise and stability analyses. Examples of the effects of self-heating on device performance are given. The coupled model is necessary to model GaAs HBT behavior properly when devices are biased at high power dissipation
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; thermal analysis; transient response; AC analysis; DC analysis; GaAs; HBT model; coupled electrical/thermal model; heterojunction bipolar transistor; high power dissipation; large-signal steady-state analysis; noise; self-heating; stability; thermal simulation; Analytical models; Circuit noise; Circuit simulation; Coupling circuits; Gallium arsenide; Heterojunction bipolar transistors; Power dissipation; Stability analysis; Steady-state; Transient analysis;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274051
