DocumentCode :
1638489
Title :
Novel fabrication methods and characteristics of organic complementary circuits
Author :
Crone, B. ; Dodabalapur, A. ; Rogers, J. ; Martin, S. ; Filas, R. ; Yen-Yi Lin ; Bao, Z. ; Sarpeshkar, R. ; Wenjie Li ; Katz, H.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fYear :
1999
Firstpage :
115
Lastpage :
118
Abstract :
The success of organic circuits depends on the implementation of novel fabrication techniques, and circuit designs which utilize organic semiconductor characteristics. We present DC, transient, and noise measurements of discrete organic FETs, and use these characteristics in SPICE simulations of complementary MOS circuits ranging in complexity from inverters through shift registers. Source/drain contacts are fabricated using electroless Ni/Au electrode deposition, a method well suited for incorporation with other fabrication techniques such as screen printing and microcontact printing.
Keywords :
CMOS digital integrated circuits; SPICE; circuit simulation; flicker noise; insulated gate field effect transistors; integrated circuit design; integrated circuit technology; molecular electronics; organic semiconductors; semiconductor device noise; /spl alpha/-sexithiophene; DC measurements; Ni-Au; SPICE simulations; circuit design; dihexyl /spl alpha/-quinquethiophene; discrete organic FETs; electroless Ni/Au electrode deposition; fabrication techniques; flicker noise; hexadecafluorocopper phthalocyanine; inverters; microcontact printing; noise measurements; organic CMOS circuits; organic semiconductor characteristics; ring oscillators; screen printing; shift registers; source/drain contacts; transient measurements; Circuit simulation; Circuit synthesis; Fabrication; Gold; Inverters; Noise measurement; OFETs; Organic semiconductors; SPICE; Shift registers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
Type :
conf
DOI :
10.1109/IEDM.1999.823859
Filename :
823859
Link To Document :
بازگشت