• DocumentCode
    1638489
  • Title

    Novel fabrication methods and characteristics of organic complementary circuits

  • Author

    Crone, B. ; Dodabalapur, A. ; Rogers, J. ; Martin, S. ; Filas, R. ; Yen-Yi Lin ; Bao, Z. ; Sarpeshkar, R. ; Wenjie Li ; Katz, H.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1999
  • Firstpage
    115
  • Lastpage
    118
  • Abstract
    The success of organic circuits depends on the implementation of novel fabrication techniques, and circuit designs which utilize organic semiconductor characteristics. We present DC, transient, and noise measurements of discrete organic FETs, and use these characteristics in SPICE simulations of complementary MOS circuits ranging in complexity from inverters through shift registers. Source/drain contacts are fabricated using electroless Ni/Au electrode deposition, a method well suited for incorporation with other fabrication techniques such as screen printing and microcontact printing.
  • Keywords
    CMOS digital integrated circuits; SPICE; circuit simulation; flicker noise; insulated gate field effect transistors; integrated circuit design; integrated circuit technology; molecular electronics; organic semiconductors; semiconductor device noise; /spl alpha/-sexithiophene; DC measurements; Ni-Au; SPICE simulations; circuit design; dihexyl /spl alpha/-quinquethiophene; discrete organic FETs; electroless Ni/Au electrode deposition; fabrication techniques; flicker noise; hexadecafluorocopper phthalocyanine; inverters; microcontact printing; noise measurements; organic CMOS circuits; organic semiconductor characteristics; ring oscillators; screen printing; shift registers; source/drain contacts; transient measurements; Circuit simulation; Circuit synthesis; Fabrication; Gold; Inverters; Noise measurement; OFETs; Organic semiconductors; SPICE; Shift registers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.823859
  • Filename
    823859