Title :
A high-density 300 ps BiCMOS GRA
Author :
Eckhardt, J.P. ; Chu, S.G. ; Umino, K.K.
Author_Institution :
IBM East Fishkill, Hopewell Junction, NY, USA
Abstract :
A multiport BiCMOS embedded static RAM (SRAM) is introduced for use as a growable register array (GRA) in high-performance gate array technologies. This design provides read access times equivalent to those of bipolar RAMs, while maintaining soft-error rates that are lower than those of CMOS. Read access times of 300 ps were achieved by eliminating all emitter-coupled-logic (ECL) to CMOS conversion from the read paths. The current implementation allows array densities as high as 200 kb embedded in gate array logic
Keywords :
BiCMOS integrated circuits; application specific integrated circuits; cellular arrays; 200 kbit; 300 ps; gate array technologies; growable register array; high-density; multiport embedded SRAM; static RAM; BiCMOS integrated circuits; CMOS technology; Decoding; Latches; Logic; MOS capacitors; Random access memory; Read-write memory; Registers; Switches;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274056
