Title :
2T1D memory cell with voltage gain
Author :
Luk, Wing K. ; Dennard, Robert H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A 2T1D dynamic memory cell with two transistors (T) and a gated diode (D) is presented. The gated diode acts as a nonlinear capacitance which amplifies the internal stored voltage in a read operation, leading to high performance, higher S/N ratio, and low voltage operation. Details about the gated diode structure, its principle of operations, the memory cell circuits and the array structure are presented, followed by hardware results.
Keywords :
CMOS integrated circuits; DRAM chips; VLSI; 2T1D memory cell; dynamic memory cell; gated diode; high performance; higher S/N ratio; internal stored voltage; low voltage operation; nonlinear capacitance; read operation; two transistors; voltage gain; CMOS memory circuits; Capacitance; Capacitors; Diodes; Dynamic voltage scaling; Hardware; Low voltage; Random access memory; Threshold voltage; Transistors;
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
DOI :
10.1109/VLSIC.2004.1346552
