Title :
SiC MOSFETs in automotive motor drive applications and integrated driver circuit
Author :
Vrtovec, R. ; Trontelj, J.
Author_Institution :
Lab. for Microelectron. at Fac. of Electr. Eng., Univ. of Ljubljana, Ljubljana, Slovenia
Abstract :
Silicon carbide (SiC) MOSFETs are about to replace conventional silicon-based power switches. Due to their blocking, thermal, conducting and switching characteristics they represent a better solution for high power and high voltage applications, such as automotive motor drives in hybrid electric vehicle. Operating conditions and advantages of using SiC MOSFET in a typical automotive motor drive application are presented. Furthermore, SiC MOSFET driving requirements are described and a driving concept based on a SiC integrated circuit (IC) is presented. The SiC IC is comprised of components available in recently presented target technology - SiC depletion and enhancement mode MOSFETs, polysilicon and diffusion resistors.
Keywords :
MOSFET; automotive electronics; driver circuits; silicon compounds; wide band gap semiconductors; SiC; automotive motor drive; blocking characteristics; conducting characteristics; diffusion resistors; enhancement mode MOSFETs; hybrid electric vehicle; integrated driver circuit; polysilicon resistors; silicon carbide MOSFETs; silicon carbide integrated circuit; silicon-based power switches; switching characteristics; thermal characteristics; Insulated gate bipolar transistors; Integrated circuits; Inverters; Logic gates; MOSFET; Silicon; Silicon carbide;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842182
