Title :
Bipolar static induction transistor (BSIT) static model
Author :
Ionescu, A.M. ; Rusu, Ana ; Postolache, C.
Author_Institution :
Dept. of Electron., Polytech. Inst. of Bucharest, Romania
Abstract :
A static model of the static induction transistor operated in the bipolar mode (BSIT) is developed. The model is based on the high-level-injection operation of the gate-to-channel junction. The minority carrier distribution in the epitaxial layer is derived and also the electrical field and the potential distribution
Keywords :
bipolar transistors; electric fields; electric potential; field effect transistors; minority carriers; semiconductor device models; bipolar static induction transistor; electrical field; gate-to-channel junction; high-level-injection operation; minority carrier distribution; potential distribution; static model; Charge carrier processes; Conductivity; DSL; Electronic components; Epitaxial layers; Hip; Impurities; P-n junctions; Plasma devices; Voltage;
Conference_Titel :
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location :
LJubljana
Print_ISBN :
0-87942-655-1
DOI :
10.1109/MELCON.1991.161790
