DocumentCode
1638663
Title
Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high-speed (160 mW, 19 GHz)
Author
Felder, A. ; Hauenschild, J. ; Mahnkopf, R. ; Rein, H.M.
Author_Institution
Siemens AG, Munchen, Germany
fYear
1992
Firstpage
159
Lastpage
162
Abstract
Two different static frequency dividers have been designed and fabricated in an advanced silicon self-aligning bipolar technology, demonstrating the high-speed and low-power capability of the technology. Maximum operating frequencies of 10.5 GHz and 19 GHz were measured at power dissipations of 4 mW and 160 mW, respectively, for the 2:1 dividing function. These results prove that silicon ICs may play an important role in communication systems in which extremely low power consumption is required at medium frequencies
Keywords
bipolar integrated circuits; digital integrated circuits; elemental semiconductors; frequency dividers; silicon; 10.5 GHz; 160 mW; 19 GHz; 4 mW; ICs; high-speed; low power consumption; self-aligning bipolar technology; static frequency dividers; Circuits; Energy consumption; Frequency conversion; Frequency measurement; Microelectronics; Optical frequency conversion; Power measurement; Research and development; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-0727-5
Type
conf
DOI
10.1109/BIPOL.1992.274060
Filename
274060
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