• DocumentCode
    1638663
  • Title

    Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high-speed (160 mW, 19 GHz)

  • Author

    Felder, A. ; Hauenschild, J. ; Mahnkopf, R. ; Rein, H.M.

  • Author_Institution
    Siemens AG, Munchen, Germany
  • fYear
    1992
  • Firstpage
    159
  • Lastpage
    162
  • Abstract
    Two different static frequency dividers have been designed and fabricated in an advanced silicon self-aligning bipolar technology, demonstrating the high-speed and low-power capability of the technology. Maximum operating frequencies of 10.5 GHz and 19 GHz were measured at power dissipations of 4 mW and 160 mW, respectively, for the 2:1 dividing function. These results prove that silicon ICs may play an important role in communication systems in which extremely low power consumption is required at medium frequencies
  • Keywords
    bipolar integrated circuits; digital integrated circuits; elemental semiconductors; frequency dividers; silicon; 10.5 GHz; 160 mW; 19 GHz; 4 mW; ICs; high-speed; low power consumption; self-aligning bipolar technology; static frequency dividers; Circuits; Energy consumption; Frequency conversion; Frequency measurement; Microelectronics; Optical frequency conversion; Power measurement; Research and development; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-0727-5
  • Type

    conf

  • DOI
    10.1109/BIPOL.1992.274060
  • Filename
    274060