DocumentCode :
1638663
Title :
Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high-speed (160 mW, 19 GHz)
Author :
Felder, A. ; Hauenschild, J. ; Mahnkopf, R. ; Rein, H.M.
Author_Institution :
Siemens AG, Munchen, Germany
fYear :
1992
Firstpage :
159
Lastpage :
162
Abstract :
Two different static frequency dividers have been designed and fabricated in an advanced silicon self-aligning bipolar technology, demonstrating the high-speed and low-power capability of the technology. Maximum operating frequencies of 10.5 GHz and 19 GHz were measured at power dissipations of 4 mW and 160 mW, respectively, for the 2:1 dividing function. These results prove that silicon ICs may play an important role in communication systems in which extremely low power consumption is required at medium frequencies
Keywords :
bipolar integrated circuits; digital integrated circuits; elemental semiconductors; frequency dividers; silicon; 10.5 GHz; 160 mW; 19 GHz; 4 mW; ICs; high-speed; low power consumption; self-aligning bipolar technology; static frequency dividers; Circuits; Energy consumption; Frequency conversion; Frequency measurement; Microelectronics; Optical frequency conversion; Power measurement; Research and development; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
Type :
conf
DOI :
10.1109/BIPOL.1992.274060
Filename :
274060
Link To Document :
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