Title :
TID behavior of complex multifunctional VLSI devices
Author :
Kalashnikov, O.A. ; Nikiforov, Alexander Y.
Author_Institution :
Nat. Res. Nucl. Univ. (NRNU) MEPHI, Moscow, Russia
Abstract :
Total ionizing dose (TID) radiation tests of complex multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs) rise up some particularities as compared to conventional “simple” ICs. The main difficulty is to organize informative and quick functional tests directly under irradiation. Functional tests approach specified for complex multifunctional VLSI devices is presented and the basic radiation test procedure is discussed in application to some typical examples.
Keywords :
VLSI; integrated circuit testing; radiation hardening (electronics); ICs; TID behavior; complex multifunctional VLSI devices; complex multifunctional very-large-scale integration; functional test approach; integrated circuits; radiation test procedure; total ionizing dose radiation tests; Degradation; Integrated circuit modeling; Microelectronics; Radiation effects; Testing; Very large scale integration;
Conference_Titel :
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-5295-3
DOI :
10.1109/MIEL.2014.6842189
