DocumentCode
163870
Title
TID behavior of complex multifunctional VLSI devices
Author
Kalashnikov, O.A. ; Nikiforov, Alexander Y.
Author_Institution
Nat. Res. Nucl. Univ. (NRNU) MEPHI, Moscow, Russia
fYear
2014
fDate
12-14 May 2014
Firstpage
455
Lastpage
458
Abstract
Total ionizing dose (TID) radiation tests of complex multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs) rise up some particularities as compared to conventional “simple” ICs. The main difficulty is to organize informative and quick functional tests directly under irradiation. Functional tests approach specified for complex multifunctional VLSI devices is presented and the basic radiation test procedure is discussed in application to some typical examples.
Keywords
VLSI; integrated circuit testing; radiation hardening (electronics); ICs; TID behavior; complex multifunctional VLSI devices; complex multifunctional very-large-scale integration; functional test approach; integrated circuits; radiation test procedure; total ionizing dose radiation tests; Degradation; Integrated circuit modeling; Microelectronics; Radiation effects; Testing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Proceedings - MIEL 2014, 2014 29th International Conference on
Conference_Location
Belgrade
Print_ISBN
978-1-4799-5295-3
Type
conf
DOI
10.1109/MIEL.2014.6842189
Filename
6842189
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