Fluctuations of the low frequency noise of MOS transistors and their modeling in analog and RF-circuits

Author

Brederlow, R. ; Weber, W. ; Schmitt-Landsiedel, D. ; Thewes, R.

fYear

1999

Firstpage

159

Lastpage

162

Abstract

We present a statistical evaluation of the low frequency noise behavior of MOSFETs. Amplitude and frequency of the 1/f-noise of small area devices show fluctuations by more than an order of magnitude. The noise fluctuations are particularly high for analog operating conditions. They are explained by considering the statistical effects of trap number and efficiency. A bias and area dependent worst case description of the noise behavior is given which can easily be included into standard circuit simulation models (e.g. BSIM3).

Keywords

1/f noise; MOSFET; UHF circuits; analogue circuits; electron traps; fluctuations; hole traps; interface states; semiconductor device models; semiconductor device noise; statistical analysis; LF noise behavior; MOS transistors; MOSFETs; RF circuits; analog circuits; analog operating conditions; circuit simulation models; low frequency noise; modeling; noise fluctuations; small area devices; statistical evaluation; trap efficiency; trap number; Circuit noise; Circuit simulation; Fluctuations; Frequency; Low-frequency noise; MOSFETs; Noise figure; Noise level; Signal to noise ratio; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823869

Filename

823869