DocumentCode
1638743
Title
A bias dependent body resistance model for deep submicron PDSOI technology
Author
Bu, Jianhui ; Bi, Jinshun ; Liu, Mengxin ; Cai, Haogang ; Han, Zhengsheng
Author_Institution
Inst. of Microelectron., Chinese Acad. & Sci., Beijing, China
fYear
2010
Firstpage
1844
Lastpage
1846
Abstract
We report a bias dependent body resistance model for deep submicron PDSOI technology. This model is well verified by the measured data based on the 0.35μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and can be implemented in the SOI MOSFET compact model like BISMSOI.
Keywords
CMOS integrated circuits; MOSFET; semiconductor device models; silicon-on-insulator; BISMSOI; Chinese Academy of Sciences; Institute of Microelectronics; SOI MOSFET; bias dependent body resistance model; deep submicron PDSOI technology; size 0.35 mum; Data models; Electrical resistance measurement; Immune system; Logic gates; MOS devices; MOSFET circuits; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667708
Filename
5667708
Link To Document