New concept of a high-speed low-power digital interface for multi-standard mobile transceiver RFIC´s in 0.13 /spl mu/m CMOS

Author

Chabrak, K. ; Bachman, F. ; Hueber, G. ; Maurer, L. ; Weigel, R.

Author_Institution

Inst. for Electron. Eng., Erlangen-Nurnberg Univ., Erlangen

Volume

1

fYear

2005

Firstpage

281

Abstract

In this paper a new concept of a high-speed low power digital interface between the RF and the base-band chip of a multi-standard mobile phone is presented and compared to other popular interfaces. First, the requirements on a digital interface at the digital output of a multi-standard mobile phone RF front-end are explained. The paper gives an insight of popular digital interfaces and presents a new concept which is more robust against the ground bounce effect. We also show measurement results of a realized test chip that show functionality and benefits of the new concept

Keywords

CMOS integrated circuits; mobile handsets; radiofrequency integrated circuits; transceivers; 0.13 mum; CMOS; RFIC; base-band chip; ground bounce effect; high-speed low-power digital interface; multistandard mobile phone; multistandard mobile transceiver; CMOS digital integrated circuits; CMOS integrated circuits; Capacitance; Crosstalk; High speed integrated circuits; Power engineering and energy; Radio frequency; Transceivers; Voltage; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on

Conference_Location

Beijing

Print_ISBN

0-7803-9128-4

Type

conf

DOI

10.1109/MAPE.2005.1617904

Filename

1617904