• DocumentCode
    1638813
  • Title

    A comprehensive MOSFET mismatch model

  • Author

    Drennan, P.G. ; McAndrew, C.C.

  • Author_Institution
    Motorola Inc., Tempe, AZ, USA
  • fYear
    1999
  • Firstpage
    167
  • Lastpage
    170
  • Abstract
    This paper presents a new model for MOSFET mismatch, based on physical process parameters and characterization by backward propagation of variance. Experimental data show significantly more accurate modeling of MOSFET mismatch over geometry and bias than previously reported models. The new approach allows identification of the fundamental cause of mismatch, for process diagnosis.
  • Keywords
    MOSFET; semiconductor device models; MOSFET mismatch model; backward propagation of variance; characterization; parametric yield loss; physical process parameters; process diagnosis; CMOS technology; Circuit optimization; Current measurement; Electrical resistance measurement; Geometry; MOSFET circuits; SPICE; Semiconductor device modeling; Solid modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.823871
  • Filename
    823871
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1638813