DocumentCode :
1638904
Title :
On the electro-optical characteristics of CMOS compatible photodiodes
Author :
Soncini, G. ; Zen, M. ; Rudan, M. ; Verzellesi, G.
Author_Institution :
IRST Trento, Italy
fYear :
1991
Firstpage :
111
Abstract :
A numerical model for the solution of semiconductor-device equations in the presence of an optical-generation effect is presented. This model, developed as a part of the general-purpose semiconductor-device analysis program HFIELDS, is to be applied to the analysis of optical sensors used in semiconductor integrated imagers. Preliminary theoretical results on CMOS-compatible photodiodes are presented and compared with experiments
Keywords :
CMOS integrated circuits; image sensors; integrated optoelectronics; photodiodes; semiconductor device models; CMOS compatible photodiodes; HFIELDS; electro-optical characteristics; numerical model; optical sensors; optical-generation effect; semiconductor integrated imagers; semiconductor-device analysis program; semiconductor-device equations; Absorption; Image analysis; Image sensors; Mathematical model; Optical propagation; Optical sensors; Optical surface waves; Optimized production technology; Photodiodes; Poisson equations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location :
LJubljana
Print_ISBN :
0-87942-655-1
Type :
conf
DOI :
10.1109/MELCON.1991.161791
Filename :
161791
Link To Document :
بازگشت