Title :
Proton implantation in lateral IGBTs
Author :
Chow, T.P. ; Pattanayak, D.N. ; Mogro-Campero, A. ; Baliga, B.J. ; Adler, M.S.
Author_Institution :
General Electric. Co., Schenectady, NY, USA
Abstract :
The effect of proton implantation on the performance of n- and p-channel, 500-V lateral insulated gate bipolar transistors (LIGBTs) are studied. It is shown that proton implantation results in a better forward drop vs. turn-off time than conventional electron irradiation. Since proton damage is also more thermally stable than electron damage, proton implantation is a better choice in LIGBT optimization for minimum power loss
Keywords :
insulated gate bipolar transistors; ion implantation; power transistors; proton effects; 500 V; insulated gate bipolar transistors; lateral IGBTs; minimum power loss; n-channel device; p-channel; proton implantation; Anodes; Cathodes; Electrons; Insulated gate bipolar transistors; Power electronics; Power transistors; Protons; Research and development; Silicon; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274072
