Title :
Optimization of shallow and deep trench isolation structures for ultra-high-speed bipolar LSIs
Author :
Itoh, N. ; Yoshino, C. ; Matsuda, S. ; Tusboi, Y. ; Inou, K. ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The authors report on an investigation into the optimization of shallow and deep trench isolation structures for ultra-high-speed bipolar LSIs. Several processes and filling materials were compared in terms of process cost, filling completeness, flatness of the field surface, residual mechanical stress, trench capacitance, etc. Among several candidate fabrication methods, shallow and deep trench isolation structures filled using low-temperature SiO2 deposition were the most suitable candidate for ultra-high-speed bipolar LSIs
Keywords :
bipolar integrated circuits; integrated circuit technology; large scale integration; SiO2-Si; deep trench isolation structures; field surface flatness; filling completeness; filling materials; low-temperature SiO2 deposition; process cost; residual mechanical stress; shallow trench isolation; trench capacitance; ultra-high-speed bipolar LSIs; Etching; Fabrication; Filling; Impurities; Large scale integration; Lead compounds; Parasitic capacitance; Stress measurement; Temperature; Ultra large scale integration;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274073
