Title :
An ultra-shallow link base for a double polysilicon bipolar transistor
Author :
Hayden, J.D. ; Burnett, J.D. ; Pfiester, J.R. ; Woo, M.P.
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
A techinque is presented for forming an ultrashallow link base in a double polysilicon bipolar transistor. This method is easily integrated into an advanced BiCMOS process, making use of a disposable polysilicon spacer technology for MOSFET lightly doped drain (LDD) formation. It makes use of the diffusion of boron from a disposable polysilicon spacer, through a thin thermal oxide layer to the underlying silicon. A very shallow link base is thus formed, allowing independent optimization of the active and link base regions. This improves the trade-off between base-emitter breakdown and base resistance and results in improved bipolar performance
Keywords :
BiCMOS integrated circuits; bipolar transistors; elemental semiconductors; integrated circuit technology; silicon; BiCMOS process; Si:B; base resistance; base-emitter breakdown; disposable polysilicon spacer technology; double polysilicon bipolar transistor; lightly doped drain; thin thermal oxide layer; ultra-shallow link base; ultrashallow base fabrication; BiCMOS integrated circuits; Bipolar transistors; Boron; CMOS process; Degradation; Electric breakdown; Hot carriers; Implants; MOSFET circuits; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274075
