Computational analysis of GaAs/AlGaAs deposition in MOCVD vertical rotating disk reactor

A systematic computational fluid dynamic (CFD) study was performed to investigate the effects of operating parameters of chamber pressure and wafer carrier rotation rate on the GaAs/AlGaAs deposition rate and uniformity in vertical rotating disc metal organic chemical vapor deposition (MOCVD) reactors. It is shown that significant improvement of the reactors efficiency can be achieved by finding the optimal chamber pressure and wafer carrier rotation rate. By degrading chamber pressure and varying wafer carrier rotation, it is finally obtained the favorable conditions of the uniform distributions of velocity and temperature profiles inside the reactor, in which the thermal buoyancy forces are effectively controlled and the flow velocity above susceptor is further increased.