Title :
A self-aligned emitter base NiSi electrode technology for advanced high-speed bipolar LSIs
Author :
Iinuma, T. ; Itoh, N. ; Inou, K. ; Nakajima, H. ; Matsuda, S. ; Kunishima, I. ; Suguro, K. ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The characteristics of double polysilicon self-aligned bipolar transistors with advanced 0.4-μm NiSi salicide base electrodes are reported. Since NiSi/polysilicon contact resistance is lower than that of TiSi2/polysilicon and the process temperature is lower, the result is a high-performance bipolar device. A very low base resistance of 91 Ω was obtained
Keywords :
bipolar integrated circuits; bipolar transistors; contact resistance; elemental semiconductors; integrated circuit technology; large scale integration; metallisation; nickel compounds; semiconductor-metal boundaries; silicon; 0.4 micron; 91 ohm; NiSi electrode technology; NiSi-Si; NiSi/polysilicon contact resistance; bipolar transistors; double polysilicon; high-speed bipolar LSIs; process temperature; self-aligned emitter; self-aligned silicide; Bipolar transistors; Boron; Contact resistance; Electrical resistance measurement; Electrodes; Large scale integration; Silicidation; Silicides; Silicon; Temperature;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274076
