Title :
20 V and 8 V lateral trench gate power MOSFETs with record-low on-resistance
Author :
Kawaguchi, Y. ; Sano, T. ; Nakagawa, A.
Author_Institution :
Adv. Discrete Semicond. Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
We propose a novel lateral trench gate power MOSFET which utilizes narrow and shallow multiple trenches as channel regions. The developed device achieved 13 m/spl Omega//spl middot/mm/sup 2/ and 5 m/spl Omega//spl middot/mm/sup 2/ of on-resistance with the breakdown voltage of 25 V, 11 V respectively, which is the record tow on-resistance among the previous works.
Keywords :
electric resistance; power MOSFET; semiconductor device breakdown; 0.6 micron; 8 to 25 V; breakdown voltage; lateral trench gate power MOSFETs; low on-resistance; shallow multiple trenches; Application software; CMOS process; Computer peripherals; Current density; Electrons; Laboratories; MOSFETs; Metalworking machines; Microelectronics; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823878
