Title :
A novel and simple 0.18µm CMOS sub-1V low-dropout regulator
Author :
Wu, Zhi-Meng ; Feng, Quan-Yuan ; Xiang, Qian-Yin
Author_Institution :
Inst. of Microelectron., Southwest Jiaotong Univ., Chengdu, China
Abstract :
A CMOS capacitor-free low-dropout (LDO) voltage regulator with 0.65-1.8 V power supply is presented. Positive feedback is used to build the differential computation of the error amplifier and the positive feedback gain is less than unity to ensure the stability. The LDO is designed in TSMC 0.18 μm CMOS processes. The maximum output current of the LDO is 50 mA at an output of 0.5 V. The simulation results show the average settling time of 9.9 μs can be achieved with 0.5% error for load current change between 5 mA and 50 mA, and the line and load regulations are 0.847%/V and 22.8 ppm/mA, respectively.
Keywords :
CMOS integrated circuits; amplifiers; voltage regulators; CMOS capacitor-free low-dropout voltage regulator; CMOS process; current 50 mA; error amplifier; positive feedback gain; power supply; size 0.18 mum; voltage 0.5 V; voltage 0.65 V to 1.8 V; CMOS integrated circuits; Capacitors; Differential amplifiers; Load modeling; Regulators; Simulation; Voltage control; Low dropout voltage regulator; capacitor free; positive feedback;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667718
