High performance scaled down Si LDMOSFET with thin gate bird´s beak technology for RF power amplifiers

Author

Hoshino, Y. ; Morikawa, M. ; Kamohara, S. ; Kawakami, M. ; Fujioka, T. ; Matsunaga, Y. ; Kusakari, Y. ; Ikeda, S. ; Yoshida, I. ; Shimizu, S.

Author_Institution

Semicond. & IC Group, Hitachi Ltd., Tokyo, Japan

fYear

1999

Firstpage

205

Lastpage

208

Abstract

A high performance Si LDMOSFET for RF power amplifiers has been developed for cellular phone applications. This MOSFET achieves low on-state resistance (Ron) (4.0 /spl Omega/ mm) and high transconductance (Gm max) (165 mS/mm). Simultaneously, the MOSFET shows sufficient drain breakdown voltage (>12 V). This is the best performance Si LDMOSFET for RF power amplifiers. An RF power amplifier with the MOSFET accomplishes 60% power-added efficiency (PAE) and 1 W output power (Pout) at 2 GHz operation. The main feature of this MOSFET is the scaled-down structure with very thin gate-bird´s beaks (10 nm) for higher Gm and lower parasitic capacitance.

Keywords

UHF field effect transistors; UHF power amplifiers; capacitance; cellular radio; elemental semiconductors; power MOSFET; semiconductor device breakdown; silicon; 0.3 nm; 1 W; 12 V; 165 mS/mm; 2 GHz; 60 percent; RF power amplifiers; Si; Si LDMOSFET; cellular phone applications; drain breakdown voltage; high transconductance; low on-state resistance; parasitic capacitance reduction; scaled-down structure; thin gate bird beak technology; Cellular phones; High power amplifiers; MOSFET circuits; Operational amplifiers; Power MOSFET; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823880

Filename

823880