High temperature (450/spl deg/C) reliable NMISFET´s on p-type 6H-SiC

Author

Wang, X.W. ; Zhu, W.J. ; Guo, X. ; Ma, T.P. ; Tucker, J.B. ; Rao, M.V.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

1999

Firstpage

209

Lastpage

212

Abstract

Enhancement mode SiC nMISFET´s made with JVD ONO (Oxide-Nitride-Oxide) stack gate dielectric have been tested at 450/spl deg/C, the highest temperature ever reported, for both performance and reliability. The data indicate that these devices are stable and highly reliable at high temperatures. Particularly, the projected lifetime at an oxide field of 3 MV/cm is well over 200 years, suggesting that the JVD ONO represents probably the most robust gate dielectric for SiC MISFET´s among those that are currently available.

Keywords

MISFET; dielectric thin films; high-temperature electronics; semiconductor device reliability; silicon compounds; wide band gap semiconductors; 450 C; JVD ONO stack gate dielectric; SiC; device lifetime; enhancement mode NMISFET; high temperature reliability; p-type 6H-SiC; Capacitance-voltage characteristics; Capacitors; Dielectric breakdown; Dielectric measurements; Dielectric substrates; Electric variables measurement; Silicon carbide; Temperature dependence; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823881

Filename

823881