DocumentCode :
1639129
Title :
Magnetoelectronic devices
Author :
De Boeck, J. ; Borghs, G.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
1999
Firstpage :
215
Lastpage :
218
Abstract :
Magnetic disk read-heads, magnetic random access memories and spin-dependent transport structures can all be covered by the term magnetoelectronic devices. This review covers spin-dependent transport in magnetic multilayers and aspects of exploitation of this physical property for magnetic nonvolatile memories (MRAM). The imbalance in the density of states for majority spin-carriers versus minority spin carriers in magnetic materials, triggers spintronic materials and device developments. Such devices are characterized by the fascinating interplay of electronic and magnetic properties.
Keywords :
giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetoresistive devices; random-access storage; MRAM; magnetic multilayers; magnetic nonvolatile memories; magnetic random access memories; magnetoelectronic devices; majority spin-carriers; minority spin carriers; spin-dependent transport structures; spintronic materials; Electric resistance; Electrons; Giant magnetoresistance; Magnetic devices; Magnetic films; Magnetic moments; Magnetic semiconductors; Magnetic separation; Magnetoelectronics; Soft magnetic materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
Type :
conf
DOI :
10.1109/IEDM.1999.823882
Filename :
823882
Link To Document :
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