Title :
Resonant Fowler-Nordheim tunneling through layered tunnel barriers and its possible applications
Author :
Korotkov, A. ; Likharev, K.
Author_Institution :
State Univ. of New York, Stony Brook, NY, USA
Abstract :
We have analyzed electron transfer through layered, symmetric, "crested" tunnel barriers, including the effect of resonant Fowler-Nordheim tunneling via electron subbands formed at the layer interfaces. The high sensitivity of the current to an applied electric field implies that the barriers may be used in terabit-scalable, nonvolatile, fast, bit-addressable memory (NOVORAM), as well as for ultradense, electrostatic data storage (ESTOR) and electronic cooling.
Keywords :
random-access storage; resonant tunnelling devices; semiconductor storage; ESTOR; NOVORAM; applied electric field; bit-addressable memory; electron subbands; electron transfer; electronic cooling; electrostatic data storage; layered tunnel barriers; nonvolatile memory; resonant Fowler-Nordheim tunneling; symmetric crested tunnel barriers; terabit-scalable memory; Conducting materials; Electronics cooling; Electrons; Electrostatics; Nonvolatile memory; Resonance; Resonant tunneling devices; Semiconductor materials; Voltage; Writing;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823884
