Title :
Use of AlGaN launcher in terahertz GaN Gunn diode
Author :
Yu, Chunli ; Yang, Linan ; Yao, Qingyang ; Liu, Qi ; Zhang, Xuhu
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
The terahertz frequency GaN Gunn diodes with GaN and AlGaN electron launchers are investigated by using an improved NDM model of GaN. The simulations demonstrate that there exists a shift of the oscillation mode from dipole domain mode toward accumulation mode with increased temperature, and the AlGaN launcher GaN Gunn diode can generate better power performance at stable oscillation mode than the conventional notch-doped GaN launcher Gunn diode.
Keywords :
Gunn diodes; III-V semiconductors; aluminium compounds; carrier mobility; gallium compounds; semiconductor device models; submillimetre wave diodes; terahertz wave devices; wide band gap semiconductors; AlGaN electron launcher; AlGaN-GaN; NDM model; accumulation mode; dipole domain mode; negatively differential mobility model; oscillation mode; terahertz frequency GaN Gunn diode simulation; Aluminum gallium nitride; Doping; Electric fields; Gallium nitride; Oscillators; Schedules; Semiconductor process modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667726
