DocumentCode
1639231
Title
Use of AlGaN launcher in terahertz GaN Gunn diode
Author
Yu, Chunli ; Yang, Linan ; Yao, Qingyang ; Liu, Qi ; Zhang, Xuhu
Author_Institution
Sch. of Microelectron., Xidian Univ., Xi´´an, China
fYear
2010
Firstpage
1862
Lastpage
1864
Abstract
The terahertz frequency GaN Gunn diodes with GaN and AlGaN electron launchers are investigated by using an improved NDM model of GaN. The simulations demonstrate that there exists a shift of the oscillation mode from dipole domain mode toward accumulation mode with increased temperature, and the AlGaN launcher GaN Gunn diode can generate better power performance at stable oscillation mode than the conventional notch-doped GaN launcher Gunn diode.
Keywords
Gunn diodes; III-V semiconductors; aluminium compounds; carrier mobility; gallium compounds; semiconductor device models; submillimetre wave diodes; terahertz wave devices; wide band gap semiconductors; AlGaN electron launcher; AlGaN-GaN; NDM model; accumulation mode; dipole domain mode; negatively differential mobility model; oscillation mode; terahertz frequency GaN Gunn diode simulation; Aluminum gallium nitride; Doping; Electric fields; Gallium nitride; Oscillators; Schedules; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667726
Filename
5667726
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