Title :
Memory operation of AlGaAs/GaAs heterostructure FETs with InAs quantum dots in an AlGaAs barrier layer
Author :
Mizutani, T. ; Inayoshi, T. ; Eguchi, Y. ; Kishimoto, S. ; Maezawa, K.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
Abstract :
AlGaAs/GaAs heterostructure FETs with InAs quantum dots in an AlGaAs barrier layer have been fabricated. I/sub DS/-V/sub G/ characteristics have shown hysteresis which corresponds to the memory operation. The retention time was more than 60 minutes at 100 K. The behavior of the HFET memory was discussed based on the electron and hole storage in the InAs QDs.
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; field effect transistors; gallium arsenide; hysteresis; semiconductor quantum dots; semiconductor storage; 100 K; 60 min; AlGaAs barrier layer; AlGaAs-GaAs; HFET memory; I-V characteristics; InAs; InAs quantum dots; characteristics hysteresis; electron storage; heterostructure FETs; hole storage; memory operation; retention time; Charge carrier processes; Electrons; Gallium arsenide; HEMTs; Hysteresis; MODFETs; Quantum dots; Self-assembly; Temperature; US Department of Transportation;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823887
