• DocumentCode
    1639237
  • Title

    Memory operation of AlGaAs/GaAs heterostructure FETs with InAs quantum dots in an AlGaAs barrier layer

  • Author

    Mizutani, T. ; Inayoshi, T. ; Eguchi, Y. ; Kishimoto, S. ; Maezawa, K.

  • Author_Institution
    Dept. of Quantum Eng., Nagoya Univ., Japan
  • fYear
    1999
  • Firstpage
    234
  • Lastpage
    237
  • Abstract
    AlGaAs/GaAs heterostructure FETs with InAs quantum dots in an AlGaAs barrier layer have been fabricated. I/sub DS/-V/sub G/ characteristics have shown hysteresis which corresponds to the memory operation. The retention time was more than 60 minutes at 100 K. The behavior of the HFET memory was discussed based on the electron and hole storage in the InAs QDs.
  • Keywords
    III-V semiconductors; aluminium compounds; cryogenic electronics; field effect transistors; gallium arsenide; hysteresis; semiconductor quantum dots; semiconductor storage; 100 K; 60 min; AlGaAs barrier layer; AlGaAs-GaAs; HFET memory; I-V characteristics; InAs; InAs quantum dots; characteristics hysteresis; electron storage; heterostructure FETs; hole storage; memory operation; retention time; Charge carrier processes; Electrons; Gallium arsenide; HEMTs; Hysteresis; MODFETs; Quantum dots; Self-assembly; Temperature; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.823887
  • Filename
    823887
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1639237